- 您现在的位置：买卖IC网 > Sheet目录121 > BAS16HT1G (Fairchild Semiconductor)DIODE 85V 200MA SOD323
 BAS16HT1G — Small Signal Diode ? 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS16HT1G Rev. A1 1 March 2010 BAS16HT1G Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1)These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be cons ulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 85 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second 600 mA TSTG Storage Temperature Range -65 to +150 °C TJ Operating Junction Temperature -55 to +150 °C Symbol Parameter Value Units PD Power Dissipation 200 mW RθJA Thermal Resistance, Junction to Ambient 600 °C/W Symbol Parameter Test Conditions Min. Max. Units VR Breakdown Voltage IR = 5.0 μA85 V VF Forward Voltage IF = 0.1mA IF = 10mA IF = 50mA IF = 150mA 715 855 1.0 1.25 mV mV V V IR Reverse Leakage VR = 75V VR = 25V, T A = 150°C VR = 75V, T A = 150°C 1.0 30 50 μA μA μA CT Total Capacitance VR = 0, f = 1.0MHz 2.0 pF trr Reverse Recovery Time IF = I R = 10mA, I RR = 1.0mA, RL = 100 Ω 6.0 ns Connection Diagram 1 2 2 1 A1 SOD-323 |